Growth of Nanostructured CdO:In Films by Pulsed Laser Deposition


In this work, indium-doped cadmium oxide (CdO:In) films were prepared by Pulsed Laser Deposition (PLD) on sapphire α- Al2O3 (006) substrate with thickness of about 100nm for all CdO:In films at different deposition conditions and the number of laser pulses was 100 pulses, by Nd-YAG Q-Switching second harmonic generation (SHG) pulsed laser with a wavelength of 532nm, repetition rate 10Hz and pulsed width 10ns. The effect of doping on the structure and morphology properties of the CdO:In films have been investigated by X-Ray diffraction (XRD), and Atomic Force Microscopy (AFM). The result showed that nano-crystalline and (111)-oriented CdO films were obtained at substrate temperature of 400°C, laser fluence 400mJ. The smallest grain size was obtained at 7wt.% In are 16.52nm, this indicates the superior nanocrystallinity of the films which also has observed from the SEM and AFM images. The surface morphology of the films reveals that presence of indium content in the structure did affect the surface morphology of the films significantly.