Influence of Deposition Temperature on Structure and Morphology of Nanostructured Sno2 Films Synthesized By Pulsed Laser Deposition (PLD)


Nanostructured Tin oxide thin films were deposited on the Si (111) substrate using pulsed laser deposition technique at different substrate temperatures (200, 300,400 and 500 °C) in an oxygen pressure (5*10-1 mbar). The structure and morphology of the as-deposited films indicate that the film crystallinity and surface topography are influenced by the deposition temperature by changing from an almost amorphous to crystalline nanostructure and rougher topography at a higher substrate temperature. Hall Effect has been studied to estimate the type of carriers, from the result we deduced that the SnO2 thin films are n-type.