The Effect of Some Experimental Parameters on the Properties of Porous Silicon

Abstract

The influence of halogen lamp illumination intensity and HF acidconcentrations on the properties of n-type porous silicon samplesduring the light-induced etching process were investigated. Thephotoluminescence (PL) spectra were recorded for porous siliconsamples prepared at high illumination intensity. The peak and theshape of PL spectra are function to illumination intensities. Theetching rates and porosities increases with increasing light beamintensity and go through maximum with increasing HF acidconcentration.