Photoluminescence lifetime in porous silicon

Abstract

Lifetime of photoluminescence emitted by porous silicon has been investigated by using pulsed nitrogen laser as excitation source. This research also involved sample preparation. This in itself necessitated software and hardware development to enable interfacing and data logging using PC. Orange and orange/red photoluminescence emitted from porous silicon samples have been studied at temperatures (77 - 295) K. The photoluminescence decay was intrinsically nonexponential at different temperatures. The photoluminescence lifetime, defined as 1/e times the initial intensity, decreased as emission energy increased, and increased with decreasing temperature. The time evolution of photoluminescence lifetimes and for orange porous silicon sample has been investigated.