Silicon Dioxide Nanostructures-Coated External Cavity for Gain Enhancement of Rhodamine B Lasing Dye

Abstract

In this work, nanostructured silicon dioxide films were deposited by closed-field unbalanced dc magnetron sputtering technique on two sides of quartz cells containing Rhodamine B dye dissolved in ethanol with 10-5 M concentration as a random gain medium. The preparation conditions were optimized to prepare highly pure SiO2 nanostructures with a minimum particle size of about 20nm. The effect of SiO2 films as external cavity for the random gain medium was determined by the laser-induced fluorescence of this medium and an increase of about 200% in intensity was observed after the deposition of nanostructured SiO2 thin films on two sides of the dye cell.