The Effects of Sputtering Time on Cds Thin Film Solar Cell Deposited by DC Plasma Sputtering Method

Abstract

CdS thin films of different thickness have been prepared by dcsputtering technique on glass slides for a window layer of solar cells. The CdStarget were sputtered in different sputtering times (1,1.5,2.5,3) hrs, workingpressure (2×10-2) mbar and discharge voltage(2) kV.The structure of thenanoparticles films was investigated of CdS thin films by X-ray diffraction(XRD).The XRD patterns showed that the films were hexagonal (wurtzite)structure having strong preferential orientation along the (002) plane withparticle size in the range of (41.04-41.46-41.88-42.53) nm, the peak at (002)preferred orientations of the films are shifted a little from left to right side andfilms converted to crystalline form. The morphology of the nanoparticles filmswas studied by atomic force microscopy (AFM) which indicates that theaverage grain size of CdS thin film is in the range of (41.3-44.2-51.6-50.08) nm.The roughness of films surface increases with increasing the sputtering time,which can be useful for the solar cell.