Carrier Temperature In Quantum Dot Optical Amplifiers


AbstractThe effect of increasing of carrier temperature in wetting layer of semiconductor optical amplifier hasbeen modeling. The occupation probability, carrier heating relaxation, spontaneous emission and freecarrier absorption have been included in our formalization. The numerical calculations showed theoccupation probability directly proportion with carrier heating time as a result of reduction of carrierdensity in wetting layer. Also, the reservoir carrier temperature is directly proportional with the fullwidth at half maximum of injected pulse and carrier heating lifetime. The numerical calculations thatare showed; the carrier heating in the rate equations satisfies the thermal equilibrium between thelattice and carriers.