Study and Investigation of the Effects of the OTA Technique on the Physical Properties of the ZnO Thin Films Prepared by PLD

Abstract

The polycrystalline thin films were deposited on glass substrate at room temperature by pulsed laser deposition PLD technique. The effects of annealing treatment by used the Oil Thermal Annealing (OTA) process on the structural, optical and electrical properties of ZnO thin film films were investigated. The film structure was investigated by X-ray diffraction to indicate that the heat treatment after the OTA process gives the optimized condition of crystalline. The transmission spectrum of the film was measured by UV-V is spectrophotometer, and the Urbach energy and forbidden band width were calculated. The surface topography of the film was observed by scanning electron microscopy (SEM) image of the ZnO thin film at the OTA process shows the changes in the shape and size of the grains. The atomic force microscopy (AFM) effect of heat treatment was demonstrated by the change in the surface roughness of the ZnO thin film. The electrical properties of thin film were optioned by Hall Effect technique. That these improvements in the ZnO thin film physical properties were annealing temperatures by OTA at 150 °C, 200 °C, 250 °C and 300 °C.