Fabrication and Study Nanostructure Deposited Thin Films Heterojunction Solar Cell

Abstract

In the present paper, nanostructure tin oxide (SnO2) thin films on Si P-typesubstrates heterojunction solar cell has been made by using a pulsed 532 nm Nd:YAGlaser. Deposition of films is achieved at 400 °C substrate temperatures. The X-raydiffraction (XRD) results show that the deposited films are crystalline with tetragonalrutile SnO2 structure. The morphology of deposited films were characterized byscanning electron microscope (SEM) and atomic force microscope (AFM), the grainsize value (30–50) nm and rms roughness values are (2.8 nm) for thin filmsdeposited at 400ºC. Photoluminescence PL spectrum showed good light emission inthe visible field. The photovoltaic characteristics included short circuit current (Jsc),open circuit voltage (Voc), where the maximum (Jsc) and (Voc)obtained at AM1were 14.3 (mA cm-2) and 630(mV), respectively. The fill factor (FF) was (0.68). Thefabricated cell exhibits good performance with 7 % conversion efficiency.