Electrical Characteristics of CuInSTe Thin Films Prepared by Quenching-Assisted Vacuum Coating Technique

Abstract

In this work, the role of substrate temperature on the electrical characteristics of CuInSTe/CdS thin film heterojunctions was investigated. The frequency and temperature dependencies upon AC conductivity were investigated in the frequency range 100Hz-10MHz and temperature range of 303-453K. The AC activation energy was found to increase from 0.1132 to 0.1258 eV with increasing substrate temperature from 293 to 423K and to decrease to 0.0962 eV with increasing frequency from 100 to 107 Hz. The exponents show a nonsystematic sequence with the increment of substrate temperature. The obtained results gave indication that there is a relation between the structure and preparation temperature as well as heat treatment. The current-voltage characteristic of CuInSTe/CdS heterojunction under illumination shows that the CuInSTe/CdS produced at 423 K is the best one.