Abstract

In the present paper CdO/Si heterojunction has been prepared by spray pyrolysismethod , electrical characteristics include I-V , C-V , were studied the build-inpotentialequal 1.7 eV and optoelectronic characteristics include I-V illuminationcondition, photovoltaic, responsivity , quantum efficiency were studied . theideality factor to be 2.93 and short circuit photocurrent 170μA, open circuitphotovoltge 120mV at AM1 condition and two peaks responsivity were found ,first peak at region 600±20nm this peak due to absorb of light in CdO throughband-to-band absorption while second region at 800±30nm which due to the Sibandgap.

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The article was added to IASJ on 2012-05-09

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