Surface Area of Porous Silicon

Abstract

The surface area of porous silicon layers produced by different methods hasbeen measured in this work. It is found that the surface area of the porous siliconis optimum when high laser power density is used to etch n –type silicon wafer viathe laser induced etching process compared with that for porous silicon producedby lower laser power density or by electrochemical etching process. A scanningelectron microscope (SEM) micrographs were used to estimate the surface area.The surface area of the porous layer is strongly dependent on the porous layergeometry and its depth.