The Effect Of Thermal Oxidation Time On The Structure And Influence On Optical Properties For Porous Silicon Prepared By Photo Electrochemical Etching

Abstract

The morphological properties of the freshly and oxidized porous silicon atoxidation time (60, 90) sec were studied. A blue emission from PSi can be seen witheyes after thermal oxidation because the increasing of energy gab due to decreasedsilicon column (nano particles).Pore size and shape of n-type wafers are estimate andcorrelated with optical properties before and after rapid thermal oxidation (RTO).