Study of Some Structural Properties of Porous Silicon Preparing by Photochemical Etching

Ghaida.S.M; N.A.A.AL-Temeeme

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Study of Some Structural Properties of Porous Silicon Preparing by Photochemical Etching

Ghaida.S.M, N.A.A.AL-Temeeme

Iraqi Journal of Physics
2009, Volume 7, Issue 8, Pages 49-52

Abstract

Porous Silicon (PSi) has been produced in this work by using Photochemical (PC) etching process by using a hydrofluoric acid (HF) solution. The irradiation has been achieved using quartz- tungsten halogen lamp. The influence of various irradiation times on the properties of PSi اmaterial such as layer thickness, etching rate and porosity was investigated in this work too.The XRD has been studied to determine the crystal structure and the crystalline size of PSi material

Keywords

Porous silicon, Photochemical, Structural properties

Year	Total	Jan	Feb	Mar	Apr	May	Jun	Jul	Aug	Sep	Oct	Nov	Dec
2024	46	4	4	7	7	5	3	6	3	7
2023	31	2	1	1	2		1	4	3	1	6	4	6
2022	51	7	2	6	3	5	3	8	7	4	2	3	1
2021	64	8	12	4	2	8	13	5	2	3	4	1	2
2020	59	5	3	2	9	2	5	3	2	10	6	8	4
2019	22	2	1	2	1		3	3	1	2	4	1	2
2018	20	1	2	4		2	3				3	1	4
2017	30	2	1	3	4	5	1	3	2	1	1	2	5
2016	24	1		1	2	1	1	1	7	3	1	4	2
2015	45	3	4	7	7	8	4	2		4	4		2
2014	83	5	5	4	2	8	6	4	1	13	6	9	20
2013	75	9	12	4	5	13	6	4	9	5	5	1	2
2012	18							6		2	2	3	5

Study of Some Structural Properties of Porous Silicon Preparing by Photochemical Etching

Abstract

Keywords

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