Performance of Sensitivity of Direct Detection Optical Receiver Incorporating MOSFET-Based Transimpedance-Type Amplifier

Abstract

Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) offer manyadvantages due to their low noise and high associated gain at microwave frequencies.Therefore, they are well suited to the amplifier requirements of broadband light-wavereceivers, through providing a high dynamic range and wide bandwidths.In this work, the performance of integrated optical receiver consisting of PINphotodiodeand MOSFET-based transimpedence type amplifier is analyzed. The effect ofvarious device parameters on receiver performance is investigated in details. The simulationresults show that the sensitivity (Psen) of an optical receiver is approximately constant if it isbased on well-designed MOSFET.