Cole- Cole Diagrams of GexS1-x Thin Films


The germanium sulfide GexS1-xthin films with differentgermanium concentration (0.1 0.2,and0.3) weight %have beenprepared by thermal evaporation under vacuum of (10 -5 Toor) withthickness (0.15μm ) at room and annealed at( 373and 423K).Measurements of The dielectric properties are carried out overfrequency range (102-107 Hz) for all the prepared films .It was foundthat all samples displayed dielectric dispersion thus the curves log 1versus log w, log 2 versus log w gave direct evidence of theexistence of Debye-type relaxation have a wide distribution ofrelaxation times. The results show that distribution parameters ( )decreases while microscopic relaxation time (0 )increases with theincreasing of germanium content and temperature of thermaltreatment . The dielectric constant 1 decreases sharply with theincreasing of germanium content in the prepared GexS1-x films .