Growth of InxGa1-xSb Bulk Crystals by Czochralski Technique


To grow InGaSb with larger In composition, step growth process was adapted. By increasing the In composition step by step, In0.1Ga0.9Sb single crystal of length 18 mm was grown. Intensities and the FWHM values of X-ray diffraction spectrum were, respectively, 10 times larger and one third of the value, compared with the values of the crystal grown directly from GaSb seed crystal.