Analytical Equivalent Circuit of High-Irradiated Conventional Silicon Solar Cell Performance

Abstract

In this study the current–voltage characteristics of a conventional silicon solar cell were studied. The experimental examination is carried out under a high concentration of light. The variations of the two reverse saturation currents are consistent with the physical significance of both the diffusion and the space-charge generation-recombination terms through their exponential variations. The simulation results clearly demonstrated that the solar cell is described with reasonable accuracy by a two-diode equivalent model that simulates the effects of the double-exponential dark current–voltage characteristics on the open-circuit voltage, fill factor, and conversion efficiency of the solar cell at a high concentration. The theoretical results are in good agreement with the experimental observations.