The Electrical Conduction Process and Trapping Studies In SiO2 Films

Abstract

Electrical conduction in Silicon dioxide (SiO2) films of thickness range from 100-200 nm with aluminum top-contact have been studied. The (MOS) metal-Oxide-semiconductor structure is found to be strongly rectifying. In forward applied bias, the current is space-charge limited (SCL) with clear indications of progressive filling of traps. In reverse biasing condition, a Schottky-type, field-enhanced emission from the top-contact is believed to occur with  = 0.44 eV.