Effect of Electron Beam Irradiation on Optical and electrical Properties of Tin Dioxide Thin Film

Abstract

SnO2 thin film have been prepared on glass substrates using the simple pyrolitic (spray) method, the SnO2 film was irradiated by a stable electron beam of 2500μA and width (1-1.5A) at different times (3,6,9 min). Optical and electrical properties were investigation before and after irradiation, from optical measurement it was found that optical band gap decreases with increasing irradiation time form (3.46 eV) to (3.05 eV). DC electrical conductivity measurements showed that the resistivity of films decreases from (7.8*10^3Ω.cm) as deposited to (1.2*10^2 Ω.cm) for 9 min irradiation time, the activation energy decreases from (0.33) to (0.2) with increases of irradiation time.