TY - JOUR ID - TI - AL0.3GA0.7AS/GAAS HETEROJUNCTION DIODE ANALYSIS AU - Sarah K. Mohammed PY - VL - IS - Conference proceedings 2020 SP - 475 EP - 485 JO - Journal of Engineering and Sustainable Development (JEASD) مجلة الهندسة والتنمية المستدامة SN - 25200917 25200925 AB - Theoretical treatment by analysis the Al0.3Ga0.7As/GaAs for long and short heterojunction diode is presented. The analysis is started by obtaining the built-in potential from the structure of diode, then the electric field and potential distribution are attained using different concentrations. In case of equal concentration, the maximum field is (4.32×104 V/cm) and potential with maximum peak at (1.2V), the depletion layer capacitance was also defined at applied voltage (VR) with value about (11.6x1015 F/cm2). According to the type of doping in (P-n) heterojunction the injected minority carrier and current densities analysis are achieved when applying voltage (+0.8 V) for forward bias and (-0.8 V) for reverse bias for both long and short diode, respectively. The value of minority carriers in n-side for both short and long diode is about (10.8X109cm-3) at forward bias. The (I-V) characteristics for two diodes (long and short) is executed using the Drift-diffusion model. The resulting for the (I-V) characteristics show typical exponential relationship between the applied voltage and output current in Cartesian and semi-log plots. The complete modeling of the device is achieved by MATLAB software.

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