TY - JOUR ID - TI - Effect of Annealing on the Electrical Characteristics of CdO-Si Heterostructure Produced by Plasma-Induced Bonding Technique AU - O.A. Hamadi PY - 2008 VL - 4 IS - 3 SP - 33 EP - 36 JO - Iraqi Journal of Applied Physics المجلة العراقية للفيزياء التطبيقية SN - 18132065 23091673 AB - In this work, the effect of annealing on the electrical characteristics of the CdO-Si heterojunction produced by plasma-induced bonding technique was studied. The heterojunction was consisting of n-type CdO on a p-type silicon substrate. Results showed reasonable improvement in the electrical characteristics of this heterojunction within a range of annealing temperatures, above which the heterojunction showed degradation in its characteristics. This work produces CdO-Si of much better characteristics than same heterojunctions produced by thermal evaporation technique.

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