@Article{, title={Performance Comparison of InP-Based Phototransistors to PIN and UTC Photodiodes}, author={C. Gonzalez}, journal={Iraqi Journal of Applied Physics المجلة العراقية للفيزياء التطبيقية}, volume={4}, number={4}, pages={13-17}, year={2008}, abstract={The main characteristics of vertically illuminated InP/InGaAs-based heterojunction bipolar phototransistors (photo-HBT) developed at OPTO+ (Alcatel) were presented. Also, the design and fabrication of photo-HBT-based monolithically integrated circuits such as optoelectronic amplifier and mixers are described. Comparisons of some performances between photo-HBTs, PIN and UTC photodiodes are commented.

} }