@Article{, title={Characteristics of a-Si:H Solar Cell Under Extended Illumination Condition Using NIR Laser}, author={S.F.A. Ali and E.A.F. Ali and S.H. Al Shaikh Hussin and F.M.M. Aasy}, journal={Iraqi Journal of Applied Physics المجلة العراقية للفيزياء التطبيقية}, volume={5}, number={1}, pages={41-44}, year={2009}, abstract={In this work, characteristics of a-Si:H solar cell under extendedillumination condition, using an NIR laser diode, were studied. Thesecharacteristics were introduced by calculations of recombination rate,open-circuit voltage and defect growth rate as functions of illuminationtime. Stabilized open-circuit voltage of 0.04V and photogeneration rateof ~2x1021cm-3 were observed. We present measurements on the declineof the open-circuit voltage VOC in a-Si:H solar cells during extendedillumination (light-soaking). We used a near-infrared laser that wasnearly uniformly absorbed in the intrinsic layer of the cell. At thehighest photogeneration rate (about 2x1021cm-3), a noticeable decline(0.01V) occurred within about 10 minutes; VOC stabilized at 0.04Vbelow its initial value after about 200 hours. We found that both thekinetics and the magnitudes of VOC are reasonably consistent with thepredictions of a calculation combining a bandtail+defect picture forrecombination and a hydrogen-collision model for defect generation.

} }