@Article{, title={Studying the capacitance – voltage (C-V) characteristics for the metal- oxide-semiconductor field- effect transistor MOSFET fabricated by photolithography technique دراسة مميزات السعه الفولتيه لترانزستور تأثير المجال معدن أوكسيد شبه موصل}, author={Adel H.AL-Kahyatt عادل حبيب عمران and E.M.Abass أحسان محسن عباس and Y.N.Obai ياسين نجم عبيد and A.S.Al-Rowass* أطياف صبحي الرواس}, journal={Journal of Kufa - physics مجلة الكوفة للفيزياء}, volume={1}, number={1 Arabic}, pages={79-92}, year={2009}, abstract={This paper contain the fabrication of metal-oxide- semiconductor field- effecttransistor MOSFET by using the lithography technique and studying of (C-V)characteristics in the reveres and forward bias and the effect of frequency variation on it,with calculate some important physical variable parameters for it.The fabricated transistor by using p- type silicon as a substrate has n-type channel (n-MOSFET) its length and width equal to L=50 μm ,Z = 1000μm . The results showed thatJOURNAL OF KUFA – PHYSICS Vol.1 No.1A Special Issue for the 2nd Conference of Pure & Applied Sciences (11-12) March 200988the capacity (CG) was decreases with the increasing of the gate voltage VG in the reversebias with frequencies (100,200,400,500) KHz, and the capacity decreases with theincreasing of the applied current frequency. The results also showed that the capacity CGincreases with the increasing of the gate voltage VG in the forward bias with the samefrequencies and the capacity decreases with the increasing of the applied currentfrequency. The behavior of capacity-voltage in the forward and reveres biases is in goodagreement with the theoretical behavior of the transistor.

٠زعم ا جٌؾمش رؾعم ١ش رشا ضٔعممزٛس رممأص ١ش ا غٌّممبي ؼِمذ -ْ أٚوغمم ١ذ- شممج ِٛصممفٟ ؽب زٌٟ الا ؾٔ ١بص الا بِ ِٟ ٚا ؼٌىغٟ ٚرأص ١ش رغ ١ش ا زٌشدد ػ ١ٍٙب , مِغ (C-V) اعٌٛئٟ ٚدساعخ ١ِّضاد ا غٌؼ -ٗ ا فٌٛ زٌ ١خ(p-type Si) ؽغبة ثؼط ا زٌّغ ١شاد ا فٌ ١ض ٠بٚ ٠خ ا ٌّٙ خّ . ا زٌشا ضٔعزٛس ا صٌّ غٕ ثبعزؼ بّي ا غٌ ١ٍىٛ ا ٌٕٛع ا ٌّٛعمترز بٕلص CG 1000 . أظٙشد ا زٌٕبئظ أ ا غٌؼخ μm 50 ٚػشظٙب μm غٛ ٌٙب (nMOSFET) n- رٚ ل بٕح ٛٔع200KHz, 100 KHz 500KHz ,400KHz فٟ ؽب خٌ الا ؾٔ ١بص ا ؼٌىغٟ ػ مٕذ ا زٌمشدداد VG غِ ص ٠بدح فٛ زٌ ١خ ا جٌٛاثخVG رضداد ثض ٠بدح فٛ زٌ ١مخ ا جٌٛاثمخ CG , ٚأ ا غٌؼخ رز بٕلص ثض ٠بدح رشدد ا زٌ ١بس ا غٌّ ػٍ , ٚأظٙشد ا زٌٕبئظ أ ٠عب أ ا غٌؼفٟ ؽب خٌ الا ؾٔ ١بص الا بِ ِٟ ػ ذٕ ا زٌشدداد ا زٌّوٛسح ٚأ ا غٌؼ رز بٕلص ثض ٠بدح رشدد ا زٌ ١مبس ا غٌّم ػٍ , ٚأ عم ٍٛن ا غٌمؼ -ٗا فٌٛ زٌ ١خ فٟ ؽب زٌٟ الا ؾٔ ١بص الا بِ ِٟ ٚا ؼٌىغٟ ٠زفك غِ ا غٌ ٍٛن ا ظٌٕشٞ زٌٍشا ضٔعزٛس} }