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Carrier Temperature In Quantum Dot Optical Amplifiers
Kadhem A. Kadhem
,
Ahmed H. Flayyih
Journal of Education for Pure Science, 2018, Volume 8, Issue 3, Pages 151-160
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Abstract The effect of increasing of carrier temperature in wetting layer of semiconductor optical amplifier has been modeling. The occupation probability
,
carrier heating relaxation
,
spontaneous emission and free carrier absorption have been included in our formalization. The numerical calculations showed the occupation probability directly proportion with carrier heating time as a result of reduction of carrier density in wetting layer. Also
,
the reservoir carrier temperature is directly proportional with the full width at half maximum of injected pulse and carrier heating lifetime. The numerical calculations that are showed
,
the carrier heating in the rate equations satisfies the thermal equilibrium between the lattice and carriers.
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