Characterization of the Copper Oxide Thin Films Deposited by Dc Sputtering Technique

Abstract

Nanocrystalline Copper Oxide films were deposited on glass substrates by plasma dc sputtering. The effected of discharge current on the structural and optical properties of sputtered films were studied .X-ray diffraction peak of Cu2O (111) and Cu4O3 (112) direction was observed at discharge current of (15-30) mA when annealed at 500 0C for 2 h. The optical energy gap for the prepared films is estimated to be in (2.05- 2.3) eV range. It was found that the effect of preparation conditions on thin films thickness strongly depends on the discharge current of argon plasma.