Preparation and Characterization of Silicon Dioxide Nanostructures by DC Reactive Closed-Field Unbalanced Magnetron Sputtering

Mohammed A. Hameed --- Zahraa M. Jabbar

Iraqi Journal of Applied Physics المجلة العراقية للفيزياء التطبيقية
ISSN: 18132065 23091673 Year: 2016 Volume: 12 Issue: 4 Pages: 13-18
Publisher: iraqi society for alternative and renewable energy sources and techniques الجمعية العراقية لمصادر وتقنيات الطاقة البديلة والمستجدة


In this work, silicon dioxide nanostructures were prepared by a reactive closed-field unbalanced magnetron dc plasma sputtering technique. The target of p-type silicon was sputtered in presence of argon-oxygen gas mixture used for plasma generation and oxidation of silicon sputtered atoms. The x-ray diffraction patterns showed that only distinct peak corresponding to the crystal plane of (101) was observed with reasonable intensity. This is typical behavior of nanostructures. The scanning electron microscopy of the prepared samples showed that certain gas mixtures can produce the smallest particles with high probability for large grains to grow. Uniform distributed particles could be obtained using different mixtures. The energy-dispersive x-ray spectroscopy showed that only silicon and oxygen have appeared in the final sample with different weight percentages depending on the mixing ratio of the argon and oxygen gases. The SiO2 prepared in this work are very good candidates to be employed in random gain media as scattering particles.


Magnetron sputtering --- Reactive sputtering --- Silicon dioxide --- Nanostructures