Epitaxial and Structural Analysis of Nickel-Manganese-Gallium Films Prepared by Magnetron Sputtering

Ali H. Abbas --- Jérémy Tillier --- Daniel Bourgault --- Laurent Carbone

Iraqi Journal of Applied Physics المجلة العراقية للفيزياء التطبيقية
ISSN: 18132065 23091673 Year: 2018 Volume: 14 Issue: 4 Pages: 13-18
Publisher: iraqi society for alternative and renewable energy sources and techniques الجمعية العراقية لمصادر وتقنيات الطاقة البديلة والمستجدة


In order to obtain Ni-Mn-Ga epitaxial films crystallized in martensite structures showing magnetic-induced rearrangement of martensite variants, a fine control of the composition is required. Here we present how the co-sputtering process might be helpful in the development of Ni-Mn-Ga epitaxial films. A batch of epitaxial Ni-Mn-Ga films deposited by co-sputtering of a Ni-Mn-Ga ternary target and a pure manganese target has been studied. The co-sputtering process allows a precise control of the film compositions and enables keeping the epitaxial growth of Ni-Mn-Ga austenite during deposition at high temperature. It gives rise to tune the content of the MIR-active 14-modulated martensite in the film at room temperature, as well as micro and macro-twinned domains sizes.


Magnetic Shape Memory --- Thin films --- Epitaxial growth --- Magnetron sputtering