A Study of structural and electrical properties ofCuIn (Sex Te1-x) 2 thin films

Abstract

In this research, resistivity of CuIn (Sex Tel-x)2 thin films prepared by thermal evaporation of thickness (250+25nm) , was measured in an electrical measurement system in the temperature ranges ( 293oK - 423oK). Resistivity of the samples was also measured after annealing for one hour in vacuum for two temperatures ( 373oK and 423oK) . Activation energies of these films were calculated before and after annealing, type of majority charge carrier was known by (Hall effect) and concentration of charge carrier and its mobility before and after annealing was also calculated.