Optical properties of Pb1-xSnxSe epitaxial layers on (100)KCl, NaCl

Abstract

Epitaxial Pb1-xSnxSe layers were grown onto cleaved and polished (100) KCl,(100) NaCl and (111)CaF2 substrates in a high vacuum system by means of the hot-wall-epitaxy (HWE) method. The source temperature of Pb1-xSnxSe ~ 570 oC and substrates temperature are ranging from 200 to 275 oC by increasing step 25 oC, growth rate (1.51-2.4 μm/h). The optical absorption constant is determined using FTIR in the (0.496-0.062) eV photon-energy range at room temperature. The data have been analyzed to estimate the forbidden bandwidth.