Growth of InxGa1-xSb Bulk Crystals by Czochralski Technique

E. Rivent --- K. Mijama --- T. Sakagawa --- T. Kogama

Iraqi Journal of Applied Physics المجلة العراقية للفيزياء التطبيقية
ISSN: 18132065 23091673 Year: 2005 Volume: 1 Issue: 4 Pages: 17-19
Publisher: iraqi society for alternative and renewable energy sources and techniques الجمعية العراقية لمصادر وتقنيات الطاقة البديلة والمستجدة


To grow InGaSb with larger In composition, step growth process was adapted. By increasing the In composition step by step, In0.1Ga0.9Sb single crystal of length 18 mm was grown. Intensities and the FWHM values of X-ray diffraction spectrum were, respectively, 10 times larger and one third of the value, compared with the values of the crystal grown directly from GaSb seed crystal.


Crystal growth --- InGaAs crystal --- step growth --- GaSb seeding