Properties of Porous Silicon Under Some Experimental Parameters on the

Adawiya J.H.

Iraqi Journal of Applied Physics المجلة العراقية للفيزياء التطبيقية
ISSN: 18132065 23091673 Year: 2013 Volume: 9 Issue: 2 Pages: 37-40
Publisher: iraqi society for alternative and renewable energy sources and techniques الجمعية العراقية لمصادر وتقنيات الطاقة البديلة والمستجدة


The influence of halogen lamp illumination intensity and HF acid concentrations on the properties of n-type porous silicon samples during the light-induced etching process were investigated. The photoluminescence (PL) spectra were recorded for porous silicon samples prepared at high illumination intensity. The peak and the shape of PL spectra are function to illumination intensities. The etching rates and porosities increases with increasing light beam intensity and go through maximum with increasing HF acid concentration.


Photo-chemical etching --- Porous silicon --- Photoluminescence