Induction of indirect somatic embryogenesis for two hybridsof Lycopersicon esculemtum Mill.

Abstract

The heavily aluminum and arsenic doped germanium films were prepared using thermal co-evaporation process to deposit abrupt p+n and n+p junction films with (4 and 0.5wt%) concentration. The prepared films were exposed to circumstance and natural radionuclide (Ra226) emitted alpha and (Sr90) emitted beta particles after heat treatment with various dosages .The J-V characteristics refer to shifting in both forward and reverse bias and lead to change in bulk resistivity, threshold voltages, damage coefficient, saturation current density, breakdown voltage, resistivity variation and damage percentages. It was observed that the damage coefficient and saturation current density decrease, but increasing in bulk resistivity and breakdown voltage after every stage of exposed radiation.