The effect of pulsed xenon radiation on the gas sensing properties of ZnO thin films used as sensing elements for detecting of explosive gases Muneer Hlail Jadua'a University of Wasit, Science College, Department of Physics

Abstract

Abstract ZnO thin films were prepared by Magnetron sputtering deposition treated electromagnetic radiation as short pulses of Xenon. It was shown that intensive short duration impulse annealing during the fractions of a second leads to crystallization of ZnO films and to the high values of its gas sensitivity for explosive gases as methane. During of experimental result of this work we also found that the change of electrical conductivity properties of ZnO with the change of methane gas concentration at temperature 260 C and 360 C after treatment by photons rays have similar character after isothermal treatment.