Dielectric permittivity and AC conductivity of GexS1-x Thin Films

Abstract

The dielectric permittivity and AC conductivity of GexS1-x samples were measured at temperatures in the range ( 293- 433 K) and frequencies in the range 100 Hz to 10 MHz..Dielectric permittivity in polycrystalline samples shows an anomaly around 413K due to its amorphous -crystalline phase transition .The A.C activation energy at1kHz estimated from Arhinuos equation is found to decrease from 0.13 to 0.068eV with the increasing of germanium content. In contrast with the polycrystalline samples, all evidence of phase transitions and/or dielectric relaxation disappears in the amorphous samples.