Table of content

Iraqi Journal of Applied Physics

المجلة العراقية للفيزياء التطبيقية

ISSN: 18132065 23091673
Publisher: iraqi society for alternative and renewable energy sources and techniques
Faculty:
Language: English

This journal is Open Access

About

The Iraqi Journal of Applied Physics (IJAP) is a peer reviewed journal of high quality devoted to the publication of original research papers from applied physics and their broad range of applications. IJAP publishes quality original research papers, comprehensive review articles, survey articles, book reviews, dissertation abstracts in physics and its applications in the broadest sense. It is intended that the journal may act as an interdisciplinary forum for Physics and its applications. Innovative applications and material that brings together diverse areas of Physics are particularly welcome. Review articles in selected areas are published from time to time. It aims to disseminate knowledge; provide a learned reference in the field; and establish channels of communication between academic and research experts, policy makers and executives in industry, commerce and investment institutions. IJAP is a quarterly specialized periodical dedicated to publishing original papers, letters and reviews in: Applied & Nonlinear Optics, Applied Mechanics & Thermodynamics, Digital & Optical Communications, Electronic Materials & Devices, Laser Physics & Applications, Plasma Physics & Applications, Quantum Physics & Spectroscopy, Semiconductors & Optoelectronics, Solid State Physics & Applications, Alternative and Renewable Energy, Computers Networks and Applications.

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Contact info

P. O. Box 55259,
Baghdad 12001,
Iraq
Website: www.iraqiphysicsjournal.com
Email: admin@iraqiphysicsjournal.com
Email: editor_ijap@yahoo.co.uk

Table of content: 2020 volume:16 issue:1

Article
Iraqi Journal of Applied Physics (IJAP)
المجلة العراقية للفيزياء التطبيقية

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Abstract

The Iraqi Journal of Applied Physics (IJAP) is a peer reviewed journal of high quality devoted to the publication of original research papers from applied physics and their broad range of applications. IJAP publishes quality original research papers, comprehensive review articles, survey articles, book reviews, dissertation abstracts in physics and its applications in the broadest sense. It is intended that the journal may act as an interdisciplinary forum for Physics and its applications. Innovative applications and material that brings together diverse areas of Physics are particularly welcome. Review articles in selected areas are published from time to time. It aims to disseminate knowledge; provide a learned reference in the field; and establish channels of communication between academic and research experts, policy makers and executives in industry, commerce and investment institutions. IJAP is a quarterly specialized periodical dedicated to publishing original papers, letters and reviews in: Applied & Nonlinear Optics, Applied Mechanics & Thermodynamics, Digital & Optical Communications, Electronic Materials & Devices, Laser Physics & Applications, Plasma Physics & Applications, Quantum Physics & Spectroscopy, Semiconductors & Optoelectronics, Solid State Physics & Applications, Alternative and Renewable Energy, and Computers and Networks.


Article
IJAP Instructions for Authors
تعليمات وإرشادات للمؤلفين

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Abstract

CONTRIBUTIONS Contributions to be published in this journal should be original research works, i.e., those not already published or submitted for publication elsewhere, individual papers or letters to editor. Manuscripts should be submitted to the editor at the mailing address: Iraqi Journal of Applied Physics, Editorial Board, P. O. Box 55259, Baghdad 12001, IRAQ Website: www.iraqiphysicsjournal.com Email: editor@iraqiphysicsjournal.com, editor_ijap@yahoo.co.uk


Article
Breakdown and Langmuir Electrical Characteristics of Glow Discharge Plasma in DC Reactive Dual-Magnetron Sputtering System

Authors: Tawfiq S. Mahdi --- Firas J. Kadhim
Pages: 3-8
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Abstract

In this work, the breakdown and Langmuir characteristics of dc glow discharge plasma employing dual-magnetron assembly were studied. The electrical characteristics of this system are optimized to use it for reactive sputtering applications. The plasma was generated by electric discharge of argon gas at pressures ranging from 0.1 to 0.8 mbar. Also, a mixture of argon and oxygen was used to generate plasma since oxygen is used as the reactive gas. First, the Paschen’s curves for both cases (argon only and argon/oxygen mixture) were plotted as the variation of breakdown voltage with the product of gas pressure (p) and inter-electrode distance (d) (i.e., p.d). The minima of these curves were ranging in 145-208V for different inter-electrode distances. The minima were also determined for the glow discharge of oxygen only to be ranging in 185-320V. In case of argon/oxygen mixture, the minima were ranging in 100-208V. The resistance of the gaseous medium was determined from the I-V characteristics and the argon showed higher resistance when compared to oxygen and argon/oxygen mixture. The plasma parameters, mainly electron and ion temperatures and densities, were determined from the Langmuir probe measurements for argon only and argon/oxygen mixture. Electron and ion temperatures in argon/oxygen mixture were higher than those in only argon. The densities showed contradictive behaviors as the electron density was lower in argon/oxygen mixture, while the ion density was higher in the same mixture.


Article
Enhancement of Current Gain at High Collector Current Densities for Silicon-Germanium Heterojunction Bipolar Transistors

Authors: Gagaan Khandurii --- Brishbhhan Panwaar
Pages: 9-14
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Abstract

In this work, an NPN Si/SiGe/SiGe graded heterojunction bipolar transistor has been compared with contemporary NPN Si/SiGe/Si double heterojunction bipolar transistor for current gain performance at high collector current densities, using a 2-dimensional device simulator. The analysis predicts that the base-collector homojunction of the first transistor device structure is responsible for improved current gain at high collector current density in comparison with the conventional transistor device and provides the option of operation at higher collector current densities.


Article
Analysis of Secondary Electron Emission in Gas Glow Discharges Used for Thin Film Deposition Processes

Authors: Oday A. Hammadi
Pages: 15-20
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Abstract

In this study, the emission coefficient of secondary electrons for some common gas discharges employed in thin film deposition processes and techniques was determined as function of some affecting parameters. This coefficient may play negative role in the optimization of discharge plasma employed for practical uses and applications. Therefore, this coefficient is often minimized even though the experimental conditions are shifted from their optima in order to ensure that the consumption of supplied power is high as much as possible. This study was supported by experimental data from a reactive plasma sputtering system used for deposition of some metal oxide and nitride thin films.


Article
Effect of Annealing Temperature on Urbach Energy for CdO:In2O3 Thin Films Prepared by Pulsed-Laser Deposition

Authors: Amer A. Ramadhan
Pages: 21-24
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Abstract

In this work, CdO:In2O3 thin films with 50:50 molar ratio were prepared by pulsed-laser deposition technique and annealed at different temperatures (373, 473 and 573 K) to study the effect of annealing on their structural, morphological and optical properties. The x-ray diffraction measurements showed that these thin films are polycrystalline and their crystallinity was enhanced with increasing annealing temperature. The UV-visible spectral measurements showed that Urbach energy was decreased with increasing annealing temperature, which causes to reduce the optical band gap energy of the prepared samples. These thin films were successfully employed for gas sensing applications.


Article
IJAP Copyright Release Form
استمارة نقل حقوق الطباعة والنشر والتوزيع

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We, the undersigned, the author/authors of the article that is submitted to the Iraqi Journal of Applied Physics (IJAP) for publication, declare that we have neither taken part or full text from any published work by others, nor presented or published it elsewhere in any other journal. We also declare transferring copyrights and conduct of this article to the Iraqi Journal of Applied Physics (IJAP) after accepting it for publication.


Article
IJAP Volume (16) Issue (1) January-March 2020
المجلد 16 العدد 1 كانون الثاني - آذار 2020

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Abstract

About Iraqi Journal of Applied Physics (IJAP) 1 Instructions to Authors 2 Breakdown and Langmuir Electrical Characteristics of Glow Discharge Plasma in DC Reactive Dual-Magnetron Sputtering System 3-8 Tawfiq S. Mahdi, Firas J. Kadhim Enhancement of Current Gain at High Collector Current Densities for Silicon-Germanium Heterojunction Bipolar Transistors 9-14 Gagan Khanduri, Brishbhan Panwar Analysis of Secondary Electron Emission in Gas Glow Discharges Used for Thin Film Deposition Processes 15-20 Oday A. Hammadi Effect of Annealing Temperature on Urbach Energy for CdO:In2O3 Thin Films Prepared by Pulsed-Laser Deposition 21-24 Amer A. Ramadhan Iraqi Journal of Applied Physics (IJAP) Copyright Form 25 Coronavirus disease 2019 (COVID-19): Situation Report – 63 World Health Organization (WHO) Contents 26


Article
Coronavirus disease 2019 (COVID-19): WHO Situation Report – 63

Authors: World Health Organization (WHO)
Pages: 27-36
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Coronavirus disease 2019 (COVID-19): Situation Report – 63

Table of content: volume:16 issue:1