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Iraqi Journal of Applied Physics

المجلة العراقية للفيزياء التطبيقية

ISSN: 18132065 23091673
Publisher: iraqi society for alternative and renewable energy sources and techniques
Faculty:
Language: English

This journal is Open Access

About

The Iraqi Journal of Applied Physics (IJAP) is a peer reviewed journal of high quality devoted to the publication of original research papers from applied physics and their broad range of applications. IJAP publishes quality original research papers, comprehensive review articles, survey articles, book reviews, dissertation abstracts in physics and its applications in the broadest sense. It is intended that the journal may act as an interdisciplinary forum for Physics and its applications. Innovative applications and material that brings together diverse areas of Physics are particularly welcome. Review articles in selected areas are published from time to time. It aims to disseminate knowledge; provide a learned reference in the field; and establish channels of communication between academic and research experts, policy makers and executives in industry, commerce and investment institutions. IJAP is a quarterly specialized periodical dedicated to publishing original papers, letters and reviews in: Applied & Nonlinear Optics, Applied Mechanics & Thermodynamics, Digital & Optical Communications, Electronic Materials & Devices, Laser Physics & Applications, Plasma Physics & Applications, Quantum Physics & Spectroscopy, Semiconductors & Optoelectronics, Solid State Physics & Applications, Alternative and Renewable Energy, Computers Networks and Applications.

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Contact info

P. O. Box 55259,
Baghdad 12001,
Iraq
Website: www.iraqiphysicsjournal.com
Email: admin@iraqiphysicsjournal.com
Email: editor_ijap@yahoo.co.uk

Table of content: 2006 volume:2 issue:1-2

Article
Junction Characteristics of Wide-Emitter (p)CdS-(n)Si-(p)Si Heterojunction Transistor

Authors: R.A. Ismail --- J.T. Jabbar --- O.A.S. Abdulrazaq
Pages: 3-5
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Abstract

Fabrication and characterization of feasible heterojunction bipolar transistor (HBT) made by depositing of p-type CdS film on monocrystalline silicon homojunction were demonstrated. The ideality factors (n) of emitterbase and base-collector abrupt junctions were 1.6 and 1.8 respectively. The transistor exhibited current gain dc as high as 360.


Article
New Method for Calculating Cumulative Line Energy Using Pupil Function Technique

Authors: Q.K. Ahmed --- M.S. Al-Ali
Pages: 7-10
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Abstract

A new relation has been derived to calculate the cumulative line energy (CLE) by using the pupil function technique for an optical system of a circular aperture. The relation was solved by numerical integration namely Gauss method for optical system free of aberration and for different focus error values. The cumulative line energy of an optical system suffering secondary spherical aberration in its optimal condition was calculated.


Article
Effect of the Scattered Solar Radiation on the Atmospheric Ozone Measurements

Authors: W.M. Yokoshvilly
Pages: 11-15
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Abstract

The spectrometer-ozonometer was used for measurement of radiation at nine wavelengths in the ultraviolet range to register the passed solar radiation. The applicability limits of the Lambert’s law for the calculation of atmospheric ozone content by the multi-wavelength method were studied. It was found that the deviations from this law which allow to use the standard method only under solar zenith angles below 80° were due to the light scattering processes. A model proposed in this work made it possible to take into account the light scattering processes, which become important under oblique beam propagation. The model was compared with the calculations on the basis of the multi-wave method. The reflection coefficients for several wavelengths were calculated using the four-flux model.


Article
Characteristics of p-n Junction Silicon Carbide LED

Authors: S.I. Valskina
Pages: 17-21
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Abstract

Silicon carbide has been widely used as material for manufacturing yellow, red, green LED and optoelecronics devices (indicators, screens). The silicon carbide LED technology has been investigated for improvement of their operational characteristics. This includes the influences of the surface processing (etching, annealing), the formation method for the p-n junctions and the contacts on the LED properties. Light-emitting devices used as light sources for optical-fiber communication lines. LED fabricated by Al+ ion-implanted in 6H-SiC and investigated their characteristics for an effective green LED. The brightness of the ion-implanted p-n junction was found to be two orders higher than that of diffusion p-n junction, and the best value was 2000-10000 cd/m2 with passing current about 0.5mA through area 50x50μm and applied voltage about 2.6±0.2V. The ion-implanted structures showed a high stability of light in the temperature range of 77-600K.


Article
FTIR Spectra of Molybdenum Tellurite Glasses

Authors: S.K. Al-Ani --- S.S. Alrawi --- A.H. Jassim --- H.A. Alhilli
Pages: 23-25
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Abstract

A series of binary tellurite glasses in the form TeO2(100-x) - MoO3(x) when [x=10, 20, 30, 40, 50, 55wt%] were prepared. FTIR spectra were measured in the range (4000-200) cm-1 and (2000-200) cm-1 respectively. The peak positions were measured and correlated to the composition and structure of the glasses .Results were compared with the crystalline states of TeO2. The FTIR spectra of these glass systems indicate that the modified oxides are connected to the chains of TeO4 units.


Article
Design of a Multi-Electrode Immersion Lens for Ion-Optical Systems

Authors: F.A.J. Almoudarris --- S.M. Jumaa --- A.K. Ahmad
Pages: 27-30
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Abstract

The present work puts forward an electrostatic optical device for application in an ion-optical system. A design has been achieved computationally for a multi-electrode immersion lens of low relative spherical and chromatic aberration coefficients with the aid of the following suggested expression for the potential field: U(z)=[(a*z)/(z2+c)]+b where a, b, and c are constants, z is the optical axis, and U(z) is the axial potential distribution. These results suggest that operating the proposed lens under zero magnification conditions is more favorable. Therefore, the proposed expression for the potential distribution is recommended for representing an electrostatic immersion lens of low relative chromatic aberration coefficient.


Article
Calculation of Charge Density Distribution of (2s-1d) Shell-Model Nuclei Using the Occupation Numbers of States

Authors: A.B. Kadhem --- E.M. Raheem
Pages: 31-36
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Abstract

The charge density distribution (CDD) of 24Mg, 28Si, 30Si, 32S and 34S nuclei have been calculated using the wave functions of the harmonic oscillator on the assumption that the occupation numbers of the states in real nuclei differ from the predictions of the simple shell model. The difference of the CDD of (28Si-30Si) and (32S-34S) isotopes have been calculated to clarify the influence of the additional neutrons on the CDD. The elastic electron scattering form factors of the considered nuclei have been calculated using the ground state charge density distributions. Introducing an additional parameter () that reflects the difference of the occupation numbers of states between the real states of the nuclei and the simple shell model predictions, leads to a very good agreement between the calculated and experimental results of the CDD and form factors. This leads to the conclusion that proposing () as an additional parameter is a real one.

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