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Iraqi Journal of Applied Physics

المجلة العراقية للفيزياء التطبيقية

ISSN: 18132065 23091673
Publisher: iraqi society for alternative and renewable energy sources and techniques
Faculty:
Language: English

This journal is Open Access

About

The Iraqi Journal of Applied Physics (IJAP) is a peer reviewed journal of high quality devoted to the publication of original research papers from applied physics and their broad range of applications. IJAP publishes quality original research papers, comprehensive review articles, survey articles, book reviews, dissertation abstracts in physics and its applications in the broadest sense. It is intended that the journal may act as an interdisciplinary forum for Physics and its applications. Innovative applications and material that brings together diverse areas of Physics are particularly welcome. Review articles in selected areas are published from time to time. It aims to disseminate knowledge; provide a learned reference in the field; and establish channels of communication between academic and research experts, policy makers and executives in industry, commerce and investment institutions. IJAP is a quarterly specialized periodical dedicated to publishing original papers, letters and reviews in: Applied & Nonlinear Optics, Applied Mechanics & Thermodynamics, Digital & Optical Communications, Electronic Materials & Devices, Laser Physics & Applications, Plasma Physics & Applications, Quantum Physics & Spectroscopy, Semiconductors & Optoelectronics, Solid State Physics & Applications, Alternative and Renewable Energy, Computers Networks and Applications.

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Contact info

P. O. Box 55259,
Baghdad 12001,
Iraq
Website: www.iraqiphysicsjournal.com
Email: admin@iraqiphysicsjournal.com
Email: editor_ijap@yahoo.co.uk

Table of content: 2008 volume:4 issue:3

Article
Laser-Human Skin Interaction: Analytical Study and Optimization of Present Non-Ablative Laser Resurfacing

Authors: W.K. Hamoudi
Pages: 5-11
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Abstract

There have been numerous of articles, reports and papers published on non-ablative laser resurfacing, showing the treatment of a wide range of tissue types, laser systems and doses and subject ages. Despite the fact that laser-skin interaction is affected when changing any of the laser parameters, many authors announced good results for the same skin conditions and disorders although different laser beam parameters were used. In their procedures they have adopted trial and error technique – a procedure that could cause some problems and side effects to patients. For random samples taken from the published articles [11-18] on non-ablative resurfacing, the authors used wide range of laser wavelengths (585-1320) nm, number of treatments (1-7) and fluences (2-179) J/cm2. In addition, they used a very wide range of laser pulse durations (6ns-40ms) and some employed cooling while others did not. This article analyzes the results presented by some authors in order to define a better guide line for the use of lasers in this field.


Article
Synthesis of Silicon Nanowires by Selective Etching Process

Authors: A.T.S. Yee
Pages: 15-17
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Abstract

In this paper, selective etching process is used to synthesize SiNWs. This method arises from electroless metal deposition on a silicon wafer through selective etching. The electroless plating technique has many advantages such as low temperature processing and simple process with non-expensive deposition facilities. A clean p-type silicon wafer was etched in an aqueous solution containing hydrofluoric acid (HF) and silver nitrate (AgNO3) at 60ºC for 60 minutes. This aqueous solution was prepared by mixing both HF and AgNO3 in a plastic beaker and was heated in hot water bath. Electroless silver deposition will take place on the surface of Si wafer and their growth mechanism are analyzed on the basis of a self assembled localized microscopic electrochemical cell model. The structure of SiNWs is observed by using field emission scanning electron microscope (FESEM). It has revealed the formation of SiNWs with diameter ranging from 40 nm to 200 nm with the length of about 20 µm. The unique features of SiNWs have made them potentially applicable in solar cell, chemical sensing devices and basic components for nanoelectronic and optoelectronic devices.


Article
Influence of Deposition Parameters on Optical and Electrical Properties of CuxS Thin Films Prepared Using Chemical Bath Deposition Method

Authors: A.M. Mousa --- S.H. Nasher --- J.-P. Ponpon
Pages: 19-24
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Abstract

Thin films of CuxS have been deposited in an aqueous solution of copper chloride, tri ethanol amine, aqueous ammonia and thiourea. The effect of deposition time, solution pH and thiourea amount on films thickness, growth rate, optical and electrical properties has been studied. The film thickness increases with increasing deposition time and thiourea volume, whereas it decreases with increasing the solution pH. The corresponding small modifications of optical properties can be explained by the increase in roughness with film thickness. Electrical resistivity is strongly influenced by the solution pH and by the thiourea amount but depends to a much less extent on the film thickness.


Article
Recent Developments in Silicon Photomultipliers

Authors: J. Ninikovic
Pages: 27-29
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Abstract

A novel type of avalanche photodetector with Geiger mode operation, known as a Silicon PhotoMultiplier (SiPM) provides an interesting advance in photodetection and is already an alternative to traditional PMTs in many applications. The state of the art of the silicon photomultipliers (SiPMs) - their main properties and problems - are discussed.


Article
Effect of Annealing on the Electrical Characteristics of CdO-Si Heterostructure Produced by Plasma-Induced Bonding Technique

Authors: O.A. Hamadi
Pages: 33-36
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Abstract

In this work, the effect of annealing on the electrical characteristics of the CdO-Si heterojunction produced by plasma-induced bonding technique was studied. The heterojunction was consisting of n-type CdO on a p-type silicon substrate. Results showed reasonable improvement in the electrical characteristics of this heterojunction within a range of annealing temperatures, above which the heterojunction showed degradation in its characteristics. This work produces CdO-Si of much better characteristics than same heterojunctions produced by thermal evaporation technique.

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