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Iraqi Journal of Applied Physics

المجلة العراقية للفيزياء التطبيقية

ISSN: 18132065 23091673
Publisher: iraqi society for alternative and renewable energy sources and techniques
Faculty:
Language: English

This journal is Open Access

About

The Iraqi Journal of Applied Physics (IJAP) is a peer reviewed journal of high quality devoted to the publication of original research papers from applied physics and their broad range of applications. IJAP publishes quality original research papers, comprehensive review articles, survey articles, book reviews, dissertation abstracts in physics and its applications in the broadest sense. It is intended that the journal may act as an interdisciplinary forum for Physics and its applications. Innovative applications and material that brings together diverse areas of Physics are particularly welcome. Review articles in selected areas are published from time to time. It aims to disseminate knowledge; provide a learned reference in the field; and establish channels of communication between academic and research experts, policy makers and executives in industry, commerce and investment institutions. IJAP is a quarterly specialized periodical dedicated to publishing original papers, letters and reviews in: Applied & Nonlinear Optics, Applied Mechanics & Thermodynamics, Digital & Optical Communications, Electronic Materials & Devices, Laser Physics & Applications, Plasma Physics & Applications, Quantum Physics & Spectroscopy, Semiconductors & Optoelectronics, Solid State Physics & Applications, Alternative and Renewable Energy, Computers Networks and Applications.

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Contact info

P. O. Box 55259,
Baghdad 12001,
Iraq
Website: www.iraqiphysicsjournal.com
Email: admin@iraqiphysicsjournal.com
Email: editor_ijap@yahoo.co.uk

Table of content: 2010 volume:6 issue:1

Article
Generation of Highly-Directed Laser-Driven Plasma Blocks for Light Ion Beam Fusion Applications

Authors: H. Hora --- F. Osman --- Y.L. Cang
Pages: 3-13
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Abstract

It is being clarified why the observations of plane wave geometry interaction within the skin depth of a laser irradiated target are very unique exceptions from the broad stream of the usual experiments of laser plasma interaction. This permits a much more simplified description by plane wave interaction theory for laser pulses of about ps or shorter duration and powers above TW and simplifies computations in contrast to the usual cases with relativistic self-focusing. After establishing theoretically and experimentally the generation of highly directed plasma blocks with ion current densities above 1010A/cm2 moving against the laser light or into the target, applications for laser fusion, and a completely new improvement of ion sources for the next generation of accelerators are discussed.


Article
Modeling of 3-D Keyhole CO2 Laser Welding of Steel

Authors: W.K. Hamoudi --- A.K. Hamoudi --- S.A. Salih
Pages: 15-23
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Abstract

A mathematical 3-D model for keyhole CO2 laser welding of thick C/Mn steel sheets under variety of laser material processing conditions is presented. The analysis yields profile of the melt pool and compare it with experiments. The model combines a moving point source for the top part of the weld and a moving line source for the parallel sided region of the weld (stem). This concept produces weld profiles that have good qualitative agreement with the experiments. Mathematical model and computer program were constructed to solve two basic heat conduction equations for the moving point and line sources. The excellent match of theoretical and experimental weld profiles will make this work a good candidate for laser welding prediction in robotic networks.


Article
Modeling of Transport Properties of Amorphous Silicon Solar Cells

Authors: P.A. Riza Khan --- S.M. Butta --- S.A. Malik
Pages: 25-32
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Abstract

In this report we present the status of three projects; amorphous silicon solar cell characteristics and modeling, hole drift mobility measurements in microcrystalline and amorphous silicon, and hole-conducting polymers as player materials for amorphous and crystal silicon solar cells. The work described herein was actually done on c-Si substrates, and is preliminary to work on a-Si:H based n/i structures. Fairly good c-Si/polyaniline diodes were fabricated; the open-circuit voltage under illumination was about 0.4V. The solar conversion efficiency of as-deposited pin a-Si:H solar cells can be explained surprisingly well from hole mobility and optical absorption measurements on the intrinsic layer material. We first realized this fact about 18 months ago.


Article
Extraction of Doping Profile in Substrate of MNOS capacitor Using Fast Voltage Ramp Deep Depletion C-V method

Authors: A.K. Faiq
Pages: 35-40
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Abstract

Two MNOS C-V profiling methods are presented; the conventional C-V profiling, and deep depletion (DD) C-V, the former shows a lack of information at the onset of inversion mode, while the latter can be achieved by the application of high speed voltage ramp of sweep rate equals 1MV/s on the MNOS gate, meanwhile monitoring the current response of the time varying voltage, the entire DD C-V curve is traced on CRO screen with suitable DC voltage bias. The results show that doping profile can be extended 1 micron deeper inside the silicon, i.e., ten times of Debye's length, hence more accurate results can be achieved. Interface states densities have small effect on final doping profile, and doping reaches approximately a constant value deep inside the silicon compatible with experimental part.


Article
Fabrication and Characterization of InZnO TFTs Grown on Transparent Conductive Oxide Substrate by DC Sputtering Technique

Authors: M.N. Hussain --- J.M. Abdul-Jabbar
Pages: 41-46
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Abstract

In this work, depletion-mode transistors were made of InZnO thin films prepared and grown on transparent conductive substrates by DC sputtering technique. The SiO2-In2O3-ZnO system and N2 plasma incorporated InZnO film were grown to get a better controllability of the carrier concentration during the film growth. Hydrogen plasma and oxygen plasma effects on the TCO films and the TFTs were investigated. Devices were simulated in a device model to extract the parasitic parameters. The depletion-mode TFTs have been fabricated successfully on glass by using InZnO films as the channel layers.


Article
Experimental Observations and Modelling of Electron Density of the Plasma Sphere

Authors: P.A. Web --- E.A. Esex
Pages: 47-50
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Abstract

The increasing use of Global Positioning System (GPS) satellites to determine the Total Electron Content (TEC) of the ionosphere has led to the question; what is the effect of the plasma sphere on these results? To estimate the size of this contribution, the Global Plasma sphere Ionosphere Density (GPID) model has been developed. This paper gives a brief overview of the GPID model, and comparisons between GPID TEC predictions and measurements from GPS receivers on board the Oersted and GFO Low Earth Orbit (LEO) satellites.

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