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Iraqi Journal of Applied Physics

المجلة العراقية للفيزياء التطبيقية

ISSN: 18132065 23091673
Publisher: iraqi society for alternative and renewable energy sources and techniques
Faculty:
Language: English

This journal is Open Access

About

The Iraqi Journal of Applied Physics (IJAP) is a peer reviewed journal of high quality devoted to the publication of original research papers from applied physics and their broad range of applications. IJAP publishes quality original research papers, comprehensive review articles, survey articles, book reviews, dissertation abstracts in physics and its applications in the broadest sense. It is intended that the journal may act as an interdisciplinary forum for Physics and its applications. Innovative applications and material that brings together diverse areas of Physics are particularly welcome. Review articles in selected areas are published from time to time. It aims to disseminate knowledge; provide a learned reference in the field; and establish channels of communication between academic and research experts, policy makers and executives in industry, commerce and investment institutions. IJAP is a quarterly specialized periodical dedicated to publishing original papers, letters and reviews in: Applied & Nonlinear Optics, Applied Mechanics & Thermodynamics, Digital & Optical Communications, Electronic Materials & Devices, Laser Physics & Applications, Plasma Physics & Applications, Quantum Physics & Spectroscopy, Semiconductors & Optoelectronics, Solid State Physics & Applications, Alternative and Renewable Energy, Computers Networks and Applications.

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Contact info

P. O. Box 55259,
Baghdad 12001,
Iraq
Website: www.iraqiphysicsjournal.com
Email: admin@iraqiphysicsjournal.com
Email: editor_ijap@yahoo.co.uk

Table of content: 2013 volume:9 issue:2

Article
Iraqi Journal of Applied Physics, Vol. 9, No. 2, April-June 2013

Pages: 1-2
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Abstract

The Iraqi Journal of Applied Physics (IJAP) is a peer reviewed journal of high quality devoted to the publication of original research papers from applied physics and their broad range of applications. IJAP publishes quality original research papers, comprehensive review articles, survey articles, book reviews, dissertation abstracts in physics and its applications in the broadest sense. It is intended that the journal may act as an interdisciplinary forum for Physics and its applications. Innovative applications and material that brings together diverse areas of Physics are particularly welcome. Review articles in selected areas are published from time to time. It aims to disseminate knowledge; provide a learned reference in the field; and establish channels of communication between academic and research experts, policy makers and executives in industry, commerce and investment institutions. IJAP is a quarterly specialized periodical dedicated to publishing original papers, letters and reviews in: Applied & Nonlinear Optics, Applied Mechanics & Thermodynamics, Digital & Optical Communications, Electronic Materials & Devices, Laser Physics & Applications, Plasma Physics & Applications, Quantum Physics & Spectroscopy, Semiconductors & Optoelectronics, and Solid State Physics & Applications.


Article
Compensation of Phase Noise for Coherent Frequency Division Multiplexing in Optical Fiber Communications System

Authors: Jasim K.H.
Pages: 3-10
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Abstract

In this paper, the Coherent Optical (CO) systems using Orthogonal Frequency Division Multiplexing (OFDM) for dispersion compensation is demonstrated. The Quadrature Amplitude Modulation QAM-OFDM transmitter signal was controlled by the Mach-Zender Modulator (MZM) which modulates the laser source with wavelength of 1550nm. The heterodyne receiver with dual-polarization optoelectronic down-converter is used to obtain good coherent detection without using optical phase locked loop. The analytical part was done using a software simulator. All the proposed system components were simulated using VPIphotonic simulation software for testing CO-OFDM system. The transmitted signal, optical spectrum, eye diagram and constellation diagram was obtained to evaluate system performance.


Article
Characterization of Indium Oxide Thin Films Grown on Silicon Substrates by Spray Pyrolysis Technique

Authors: Raid A.I. --- Omar A.A
Pages: 11-14
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Abstract

In2O3 thin films have been deposited on silicon substrate by chemical spray pyrolysis. These films show high transparency in the visible and near-IR regions. Photoresponse of In2O3/c-Si isotype hetero-photodiode without post-deposition heat treatment has been investigated in the visible and infrared regions. Peak response situated at 600nm was observed. External quantum efficiency was 32% at peak response. C-V measurements revealed that the junction was abrupt type and built-in potential around 1eV has been obtained.


Article
Intense Femtosecond Pulse Generation

Authors: Krausz F.
Pages: 15-17
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Abstract

Frequency-doubled pulses from a sub-40-fs, 1-kHz Ti:sapphire amplifier system are spectrally broadened in an argon-filled hollow waveguide. Compression of the self-phase-modulated pulses is implemented with chirped mirrors and a prism pair, yielding 8-fs, 15-mJ pulses in the violet spectral range.


Article
Properties of Copper Sulfide Thin Films Prepared by CBD Method

Authors: Ali. M.M. --- Salma M.H. --- Jean P.P.
Pages: 19-24
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Abstract

Thin films of CuxS have been deposited in an aqueous solution of copper chloride, tri ethanol amine, aqueous ammonia and thiourea. The effect of deposition time, solution pH and thiourea amount on films thickness, growth rate, optical and electrical properties has been studied. The film thickness increases with increasing deposition time and thiourea volume, whereas it decreases with increasing the solution pH. The corresponding small modifications of optical properties can be explained by the increase in roughness with film thickness. Electrical resistivity is strongly influenced by the solution pH and by the thiourea amount but depends to a much less extent on the film thickness.


Article
Reinforcing of Aluminum-Silicon Alloy with Nano Composites

Authors: Ali. M --- Mohsen O.S.
Pages: 25-30
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Abstract

The microstructures of composites were examined using optical microscopy (OM) and transmission electron microscopy (TEM). Microscopic observations of the microstructures revealed that the dispersion of the particles was uniform. The tensile strength (yield strength and ultimate tensile strength) and the Young's modulus improve with the addition of nano particles although some reduction in ductility is observed. The highest yield strength and UTS was obtained by 3.5 vol. % of SiC nano-particles. A relatively ductile fracture in tensile fractured samples was observed by fractography examination.


Article
Using the Occupation Numbers of States to Calculate Charge Density Distribution

Authors: Alaa B.K. --- Ehsan M.R.
Pages: 31-36
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Abstract

Introducing an additional parameter that reflects the difference of the occupation numbers of states between the real states of the nuclei and the simple shell model predictions, leads to a very good agreement between the calculated and experimental results of the CDD and form factors. This leads to the conclusion that proposing as an additional parameter is a real one.


Article
Properties of Porous Silicon Under Some Experimental Parameters on the

Authors: Adawiya J.H.
Pages: 37-40
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Abstract

The influence of halogen lamp illumination intensity and HF acid concentrations on the properties of n-type porous silicon samples during the light-induced etching process were investigated. The photoluminescence (PL) spectra were recorded for porous silicon samples prepared at high illumination intensity. The peak and the shape of PL spectra are function to illumination intensities. The etching rates and porosities increases with increasing light beam intensity and go through maximum with increasing HF acid concentration.


Article
Characterization of InZnO TFTs Prepared by DC Sputtering Technique

Authors: Moath N.H. --- Jasim M.A.
Pages: 41-46
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Abstract

In this work, depletion-mode transistors were made of InZnO thin films prepared and grown on transparent conductive substrates by DC sputtering technique. The SiO2-In2O3-ZnO system and N2 plasma incorporated InZnO film were grown to get a better controllability of the carrier concentration during the film growth. Hydrogen plasma and oxygen plasma effects on the TCO films and the TFTs were investigated. Devices were simulated in a device model to extract the parasitic parameters. The depletion-mode TFTs have been fabricated successfully on glass by using InZnO films as the channel layers.

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