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Article
Fabrication and Characterization of High Efficient CdS/Si Heterojunction Solar Cells
تصنيع ودراسة خلايا Cds/Si الشمسية الهجينة عالية الكفاءة

Author: Khalid Z. Al-Ta'ai
Journal: Engineering and Technology Journal مجلة الهندسة والتكنولوجيا ISSN: 16816900 24120758 Year: 2005 Volume: 24 Issue: 7 Pages: 869-876
Publisher: University of Technology الجامعة التكنولوجية

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Article
P-Cu2S/n-Si Anisotype Heterojunction Solar Cell
تصنيع خلية شمسية ذات المفرق الهجين P-Cu2S/n-Si

Authors: Ali H. Al-Hamdani --- Khaled Z. Yahiya
Journal: Engineering and Technology Journal مجلة الهندسة والتكنولوجيا ISSN: 16816900 24120758 Year: 2005 Volume: 24 Issue: 7 Pages: 891-897
Publisher: University of Technology الجامعة التكنولوجية

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Article
Characterization of CdS:In/Si Heterojunction Solar Cells

Authors: S.K. Al-Ani --- R.A. Ismail --- H.F. Al-Ta’ay
Journal: Iraqi Journal of Applied Physics المجلة العراقية للفيزياء التطبيقية ISSN: 18132065 23091673 Year: 2005 Volume: 1 Issue: 2 Pages: 13-17
Publisher: iraqi society for alternative and renewable energy sources and techniques الجمعية العراقية لمصادر وتقنيات الطاقة البديلة والمستجدة

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Abstract

In this work, CdS:In/Si anisotype heterojunction solar cells prepared by thermal evaporation technique of CdS thin films on monocrystalline silicon substrate have been fabricated, characterized and analyzed. Cells aparameters dependencies on the indium diffusion temperature were reported. The amximum obtained conversion efficiency was 8% at 93mW/cm2 (AM1) for cells made with indium diffusion temperature of 300°C. these cells are made without using antireflecting coatings and grid contacts.


Article
Annealing Effect on the Photoluminescence of CdTe/CdSe Thin Film Photovoltaic Devices

Authors: A.C. de Graev --- G. Manterick
Journal: Iraqi Journal of Applied Physics المجلة العراقية للفيزياء التطبيقية ISSN: 18132065 23091673 Year: 2005 Volume: 1 Issue: 3 Pages: 23-25
Publisher: iraqi society for alternative and renewable energy sources and techniques الجمعية العراقية لمصادر وتقنيات الطاقة البديلة والمستجدة

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Abstract

The depth dependence of photoluminescence from as grown and CdCl2 treated polycrystalline CdSe/CdTe solar cells has been compared using a bevel etch technique. It has been found that the three emission bands observed at 1.59eV, 1.55eV and 1.45eV all became more intense after the treatment, with the emission at 1.55eV near the CdSe/CdTe interface being the most affected.

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