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High-Quality Plasma- Induced Crystallization of Amorphous Silicon Structures

Author: A.M. Aldhafiri
Journal: Iraqi Journal of Applied Physics المجلة العراقية للفيزياء التطبيقية ISSN: 18132065 23091673 Year: 2009 Volume: 5 Issue: 1 Pages: 35-39
Publisher: iraqi society for alternative and renewable energy sources and techniques الجمعية العراقية لمصادر وتقنيات الطاقة البديلة والمستجدة


The investigation of polycrystalline silicon made on glass and carboncoated nickel substrates by aluminum-induced crystallization ofamorphous silicon (a-Si) is reported. Aluminum was sputtered onto a-Si films deposited in an ultra-high-vacuum plasma-enhanced chemicalvapor deposition (PECVD) system to form Al/a-Si substrate structures.These samples were then vacuum annealed for 30min. at temperaturesin the range 150-350°C. X-ray diffractometry (XRD) was utilized todetermine the crystallization temperature. Annealing at 275°C resultedin the formation of crystalline Si as observed by XRD. The presence ofthese hillocks or bumps after annealing at 275°C and above confirmsthat the a-Si has been crystallized.


PECVD --- polycrystalline Si --- Amorphous Si --- XRD

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