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Stress Management and Interfacial Strength of Gallium Nitride Layer Grown on Diamond Substrate

Author: A.R. Sing
Journal: Iraqi Journal of Applied Physics المجلة العراقية للفيزياء التطبيقية ISSN: 18132065 23091673 Year: 2017 Volume: 13 Issue: 2 Pages: 19-22
Publisher: iraqi society for alternative and renewable energy sources and techniques الجمعية العراقية لمصادر وتقنيات الطاقة البديلة والمستجدة

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Abstract

In this work, the stress management and interfacial strength of gallium nitride layer grown on diamond substrate, as well as homogeneous interfacial thermal properties across the wafer, have been achieved. These results on such material systems are highly important for reliable high-power electronics based on this material system, such as high electron mobility transistors.

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