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Performance Comparison of InP-Based Phototransistors to PIN and UTC Photodiodes

Author: C. Gonzalez
Journal: Iraqi Journal of Applied Physics المجلة العراقية للفيزياء التطبيقية ISSN: 18132065 23091673 Year: 2008 Volume: 4 Issue: 4 Pages: 13-17
Publisher: iraqi society for alternative and renewable energy sources and techniques الجمعية العراقية لمصادر وتقنيات الطاقة البديلة والمستجدة

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Abstract

The main characteristics of vertically illuminated InP/InGaAs-based heterojunction bipolar phototransistors (photo-HBT) developed at OPTO+ (Alcatel) were presented. Also, the design and fabrication of photo-HBT-based monolithically integrated circuits such as optoelectronic amplifier and mixers are described. Comparisons of some performances between photo-HBTs, PIN and UTC photodiodes are commented.

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