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This paper reviews the physical and chemical principles of plasma-assisted chemical vapor deposition (CVD) technique for thin films. We focus on the integration, process, and reliability requirements for dielectric films used for isolation, passivation, barrier, and antireflective-coating applications in ultra-large-scale integrated (ULSI) semiconductor circuits.
PECVD --- Dielectric films --- ULSI circuits --- Microelectronics production
In this work, profiles of laser-induced diffusion of antimony in silicon were presented. These profiles were considered to attempt enhancing of the silicon-based devices. This enhancement is attributed to the increasing achieved in the diffusion length within a certain layer of the active region in the device. Laser-induced diffusion is a perfect technique for improving the characteristics of electronic devices since it is flexible, contactless, clean and well controlled.
Laser-induced diffusion --- Sb-doped silicon --- Transistor current gain
In this investigation, the anisotropic extent of HAZ in laser grooving of fiber-reinforced plastic was studied by constructing an analytical model then comparing results obtained with the experimental. A principle of three main components of anisotropic thermal conductivity was considered, and then the equation governing thermal conduction process was transformed to a form similar to that of isotropic material. An analysis, based on a three-dimensional anisotropic thermal conductivity and a moving heat source, was presented to predict HAZ extent in laser grooving of fiber-reinforced plastic. This analysis included prediction of HAZ extent when grooving is parallel to the principal axes and when it is off-axes. The HAZ extent was determined depending on temperature difference relative to matrix combustion or char temperature. With respect to survey of previous works, this investigation is a novel attempt to analyze the extent of HAZ in FRP grooving by a CW CO2 laser.
CW CO2 laser --- Laser cutting --- HAZ --- Fiber-reinforced plastics
In this work, the effect of annealing on the electrical characteristics of the CdO-Si heterojunction produced by plasma-induced bonding technique was studied. The heterojunction was consisting of n-type CdO on a p-type silicon substrate. Results showed reasonable improvement in the electrical characteristics of this heterojunction within a range of annealing temperatures, above which the heterojunction showed degradation in its characteristics. This work produces CdO-Si of much better characteristics than same heterojunctions produced by thermal evaporation technique.
CdO-Si structure --- Bulk bonding --- Heterojunctions --- Heat treatment
In this work, results of a mathematical analysis of the role of workpiece preheating in laser keyhole welding were presented. This analysis considered the steady-state welding as well as certain range of boundary conditions over which preheating effect would be indicated. This work is an attempt to interpret the role of preheating to increase welding depth and perform keyhole welding with high quality using physical and thermal properties of steel alloys.
Preheating effect --- Keyhole welding --- Laser welding --- Low-carbon steel
In this work, optoelectronics characteristics of arsenic-doped silicon photodetectors produced by laser-induced diffusion technique were introduced. Results explained that the parameters of the photodetectors depend on laser energy and substrate temperature. Maximum Responsivity was obtained for the photodetectors prepared by laser fluence of 9.08J/cm2 at substrate temperature of 598K. The pulse response waveform of photodetectors illustrated that the rise time is not dominated by RC. Non-linearity deviation coefficient was improved by factors 2.1 for As-doped Si photodetectors when substrate temperature is raised from 300K to 598K.
Silicon photodetectors --- Photo-response --- Laser-induced diffusion
In this work, the effect of self-absorption by molecules of the active medium on the output laser power of a low-pressure CW CO2 laser was studied. The effects of discharge current, output coupling and total gas pressure on the output laser power were discussed. It was explained that the self-absorption depends on CO2 concentration, output coupling and discharge current and there is a threshold value for both output coupling and discharge current at which the absorption is clearly effective.
Co2 laser --- CW lasers --- Self-absorption --- Output coupling
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