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Synthesized Cu (In, Ga) Se2 (CIGS) thin films and implementation as the active light absorbing material in photovoltaic devices (PVs)
تحضير الغشاء(CIGS) CuInGaSe2 كطبقة إمتصاص الضوء لنبائط الفولطاضوئية

Authors: Omar A. Ali --- Wasan R. Saleh --- Vikas V. Reddy --- Jackson Stolle --- et al.
Journal: Engineering and Technology Journal مجلة الهندسة والتكنولوجيا ISSN: 16816900 24120758 Year: 2015 Volume: 33 Issue: 9 Part (B) Scientific Pages: 1753-1760
Publisher: University of Technology الجامعة التكنولوجية

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Abstract

This review article summarizes our research focused on Cu(In, Ga)Se2 (CIGS) nanocrystals, including their synthesis and implementation as the active light absorbing material in photovoltaic devices (PVs). CIGS thin films were prepared by arrested precipitation from molecular precursors consisting of CuCl, InCl3, GaCl3 and Se metal onto Mo/soda-lime glass (SLG) substrates. We have sought to use CIGS nanocrystals synthesized with the desired stoichiometry to deposit PV device layers without high temperature processing. This approach, using spray deposition of the CIGS light absorber layers, without high temperature selenization, has enabled up to 1.5 % power conversion efficiency under AM 1.5 solar illumination. The composition and morphology of CIGS thin films were studied using energy dispersive spectroscopy (EDS) and scanning electron microscopy (SEM), respectively. X-ray diffraction (XRD) studies show that the structural formation of CIGS chalcopyrite structure.

حضر الحبر النانوي(CIGS) CuInGaSe2 ليكون طبقة إمتصاص الضوء لخلية شمسية وذلك بتفاعل عناصر النحاس والأنديوم والكاليوم والسلينيوم ذات النقاوة العالية في درجة حرارة 240 oC لمدة 30 دقيقة في بيئة من غاز النتروجين ومفرغة من الهواء، بعد ذلك تم ترسيب الأغشية على أرضيات من زجاج الـ SLG مغطاة بطبقة من المولبدينوم ،عملية الترسيب تمت بطريقة Spray – Coating))). اظهرت دراسة خواص تيار- جهد للمفرق (Mo/CIGS/CdS/ ZnO/ITO) بان الكفاءة 1.561% بسمك 500 نانومتر وتركيز30 mg/ml .


Article
Silicon Dioxide Nanostructures-Coated External Cavity for Gain Enhancement of Rhodamine B Lasing Dye

Authors: Mohammed A. Hameed --- Omar A. Ali --- Sarmed S.M. Al-Awadi
Journal: Iraqi Journal of Applied Physics المجلة العراقية للفيزياء التطبيقية ISSN: 18132065 23091673 Year: 2018 Volume: 14 Issue: 1 Pages: 3-10
Publisher: iraqi society for alternative and renewable energy sources and techniques الجمعية العراقية لمصادر وتقنيات الطاقة البديلة والمستجدة

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Abstract

In this work, nanostructured silicon dioxide films were deposited by closed-field unbalanced dc magnetron sputtering technique on two sides of quartz cells containing Rhodamine B dye dissolved in ethanol with 10-5 M concentration as a random gain medium. The preparation conditions were optimized to prepare highly pure SiO2 nanostructures with a minimum particle size of about 20nm. The effect of SiO2 films as external cavity for the random gain medium was determined by the laser-induced fluorescence of this medium and an increase of about 200% in intensity was observed after the deposition of nanostructured SiO2 thin films on two sides of the dye cell.

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