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Article
The Effects of Sputtering Time on Cds Thin Film Solar Cell Deposited by DC Plasma Sputtering Method

Authors: Azhar K. Sadkhan --- Mohammed K. Khalaf
Journal: Engineering and Technology Journal مجلة الهندسة والتكنولوجيا ISSN: 16816900 24120758 Year: 2018 Volume: 36 Issue: 2 Part (C) Pages: 123-127
Publisher: University of Technology الجامعة التكنولوجية

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Abstract

CdS thin films of different thickness have been prepared by dcsputtering technique on glass slides for a window layer of solar cells. The CdStarget were sputtered in different sputtering times (1,1.5,2.5,3) hrs, workingpressure (2×10-2) mbar and discharge voltage(2) kV.The structure of thenanoparticles films was investigated of CdS thin films by X-ray diffraction(XRD).The XRD patterns showed that the films were hexagonal (wurtzite)structure having strong preferential orientation along the (002) plane withparticle size in the range of (41.04-41.46-41.88-42.53) nm, the peak at (002)preferred orientations of the films are shifted a little from left to right side andfilms converted to crystalline form. The morphology of the nanoparticles filmswas studied by atomic force microscopy (AFM) which indicates that theaverage grain size of CdS thin film is in the range of (41.3-44.2-51.6-50.08) nm.The roughness of films surface increases with increasing the sputtering time,which can be useful for the solar cell.


Article
Photovoltaic Properties of CdS/Si Heterojunction Prepared by DC Plasma Sputtering Technique

Authors: Mohammed K. Khalaf --- Sabah Habeeb Sabeeh --- Azhar K. Sadkhan
Journal: Engineering and Technology Journal مجلة الهندسة والتكنولوجيا ISSN: 16816900 24120758 Year: 2016 Volume: 34 Issue: 2 Part (B) Scientific Pages: 311-316
Publisher: University of Technology الجامعة التكنولوجية

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Abstract

CdS/Si heterojunction has been fabricated by dc plasma sputtering technique. Polycrystalline CdS films have been prepared by dc plasma sputtering technique on Si substrate. The current – voltage under illumination showed that the photocurrent increases with increasing incident illumination intensity for CdS/Si heterojunction. The CdS thin films have been sputtered under vacuum of (9×10-2 ,8×10-2, 6×10-2,5×10-2) mbar, theheterojunction has better photovoltaic properties. The open circuit voltage (Voc) and the short circuit current (Isc)were found to vary with working discharge pressure, and the efficiency is 6.72% at 50.3 mW/cm2.


Article
Characterization of D.C. Sputtering System

Authors: A.S. Jabbar --- A.J. Haider --- A.M. Mousa
Journal: Iraqi Journal of Applied Physics Letters الرسائل العراقية في الفيزياء التطبيقية ISSN: 1999656X Year: 2008 Volume: 1 Issue: 1 Pages: 3-9
Publisher: iraqi society for alternative and renewable energy sources and techniques الجمعية العراقية لمصادر وتقنيات الطاقة البديلة والمستجدة

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Abstract

DC sputtering system was designed and fabricated and it used fordeposition cadmium films. The optimum conditions for deposition wasdetermined experimentally under different voltages, pressures, and inter -electrode distances. XRD spectra show a clear indication of (hcp) peakswhich belongs to pure cadmium metal.


Article
Characterization of E-Mode InZnO Thin Film Transistors Produced by DC Sputtering Technique

Authors: G.M.A. Yussif --- A.M.H. Enagar --- A.S. Megazi
Journal: Iraqi Journal of Applied Physics Letters الرسائل العراقية في الفيزياء التطبيقية ISSN: 1999656X Year: 2010 Volume: 3 Issue: 1 Pages: 19-22
Publisher: iraqi society for alternative and renewable energy sources and techniques الجمعية العراقية لمصادر وتقنيات الطاقة البديلة والمستجدة

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Abstract

In this work, InZnO and InGaZnO were used as channel layers to fabricate enhancement mode thin film transistors on glass and flexible transparent substrate. The SiO2-In2O3-ZnO system and N2 plasma incorporated IZO film were grown to get a better controllability of the carrier concentration during the film growth. Hydrogen plasma and oxygen plasma effects on the TCO films and the TFTs were investigated.


Article
Fabrication and Characterization of InZnO TFTs Grown on Transparent Conductive Oxide Substrate by DC Sputtering Technique

Authors: M.N. Hussain --- J.M. Abdul-Jabbar
Journal: Iraqi Journal of Applied Physics المجلة العراقية للفيزياء التطبيقية ISSN: 18132065 23091673 Year: 2010 Volume: 6 Issue: 1 Pages: 41-46
Publisher: iraqi society for alternative and renewable energy sources and techniques الجمعية العراقية لمصادر وتقنيات الطاقة البديلة والمستجدة

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Abstract

In this work, depletion-mode transistors were made of InZnO thin films prepared and grown on transparent conductive substrates by DC sputtering technique. The SiO2-In2O3-ZnO system and N2 plasma incorporated InZnO film were grown to get a better controllability of the carrier concentration during the film growth. Hydrogen plasma and oxygen plasma effects on the TCO films and the TFTs were investigated. Devices were simulated in a device model to extract the parasitic parameters. The depletion-mode TFTs have been fabricated successfully on glass by using InZnO films as the channel layers.


Article
Characterization of InZnO TFTs Prepared by DC Sputtering Technique

Authors: Moath N.H. --- Jasim M.A.
Journal: Iraqi Journal of Applied Physics المجلة العراقية للفيزياء التطبيقية ISSN: 18132065 23091673 Year: 2013 Volume: 9 Issue: 2 Pages: 41-46
Publisher: iraqi society for alternative and renewable energy sources and techniques الجمعية العراقية لمصادر وتقنيات الطاقة البديلة والمستجدة

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Abstract

In this work, depletion-mode transistors were made of InZnO thin filmsprepared and grown on transparent conductive substrates by DC sputteringtechnique. The SiO2-In2O3-ZnO system and N2 plasma incorporated InZnOfilm were grown to get a better controllability of the carrier concentrationduring the film growth. Hydrogen plasma and oxygen plasma effects on the TCO films and the TFTs were investigated. Devices were simulated in a device model to extract the parasitic parameters. The depletion-mode TFTs have been fabricated successfully on glass by using InZnO films as the channel layers.


Article
NO2 Gas Sensor Utilizing Fe2O3 Thin Films Prepared By DC- Magnetron Sputtering Method
متحسس غاز ثاني اوكسيد النايتروجين بأستخدام الصفائح الرقيقية لمادة ثالث اوكسيد الحديد بطريقة الترذيذ المغناطيسي ( DC )

Authors: Kassim M. Wadi .قاسم مهدي وادي --- Aqeel Nafea Abdulateef عـقيل نافع عبداللطيف
Journal: Journal of Al-Ma'moon College مجلة كلية المأمون ISSN: 19924453 Year: 2017 Issue: 30 Pages: 161-173
Publisher: AlMamon University College كلية المامون الجامعة

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Abstract

In our research we investigated and reported the (NO2) gas sensor properties of iron oxide (Fe2O3) thin films prepared via magnetron DC- sputtering with different thicknesses according to various deposition times, each film thickness is tested with different sample temperature (200, 250 and 300) oC in order to enhance gas sensitivity. In the experimental and test procedure parts the preparation and test steps for the sensor were described briefly with simplified figures describing the system. The test was done for all samples under same biasing voltage and gas-air concentration. Sensitivity was calculated using the provided equation. The electrical properties of thin films are also shortly described. The results show that as the film thickness increases the film gas sensitivity increases and for each film thickness, the gas sensitivity increases also as the operating temperature increases

تم دراسة ومناقشة وتوثيق خواص المتحسس الغازي (NO2) المحضر من اوكسيد الحديد Fe2O3 بطريقة الترذيذ بواسطة magnetron – DC على صفائح زجاجية باسماك مختلفة وبأوقات ترسيب مختلفة . تم فحص هذه الاغشية الرقيقة بدرجات حرارة مختلفة 200 , 250 , 300 درجة مئوية لغرض تحديد حساسية هذا المتحسس الغازي والخواص الكهربائية. في الجزء العملي المتعلق بتحضير المتحسس و الفحص تم شرح خطوات الفحص بشكل مختصر مع صور مبسطة للمنظومة التي تم العمل فيها. أجري الفحص لجميع العينات تحت نفس جهد الانحياز وكذلك نفس تركيز الغاز-هواء . الحساسية قد تم حسابها من المعادلة المعطاة كما تم شرح الخواص الكهربائية للعينات.اظهرت نتائج هذه الفحوصات ازدياد الحساسية بازدياد السمك وحجم الحبيبات وكذلك بزيادة درجة التشغيل .


Article
Spectroscopic and structural studies of cadmium oxide thin films prepared by D.C magnetron sputtering
الدراسات الطيفية والتركيبية لاغشية أوكسيد الكادميوم الرقيقة المحضرة بطريقة الترذيذ المغناطيسي بالتيار المستمر

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Abstract

Cadmium oxide thin films were prepared by D.C magnetron plasma sputtering using different voltages (700, 800, 900, 1000, 1100 and 1200) Volt. The Cadmium oxide structural properties using XRD analysis for just a voltage of 1200 volt at room temperature after annealing in different temperatures (523 and 623) K were studied .The results show that the films prepared at room temperature have some peaks belong to cadmium element along the directions (002), (100), (102) and (103) while the other peaks along the directions of (111), (200) and (222) belong to cadmium oxide. Annealed samples display only cadmium oxide peaks. Also, the spectroscopic properties of plasma diagnostic for CdO thin films were determined and the results show that the electron temperature and electron density increase with increasing of sputtered voltage.

تم تحضير أغشية اوكسيد الكادميوم الرقيقة بطريقة الترذيذ المغناطيسي بالتيار المستمر بأستخدام فولتيات ترسيب مختلفة V(700, 800, 900, 1000, 1100, 1200) حيث درست الخصائص التركيبية باستخدام تحليل حيود الاشعة السينية (XRD) عند فولتية الترسيب V(1200) فقط في درجة حرارة الغرفة وبعد التلدين في درجات حرارة مختلفة K(523, 623) وبينت النتائج أن الاغشية المحضرة في درجة حرارة الغرفة فيها قمم تنتمي الى عنصر الكادميوم على طول الاتجاهات للمستويات (002), (100), (102) و (103) وقمم أخرى تنتمي الى أوكسيد الكادميوم على طول الاتجاهات للمستويات (111), (200) و (222) كذلك تم تشخيص البلازما من خلال تحديد الخصائص الطيفية لاغشية اوكسيد الكادميوم الرقيقة وبينت النتائج أن درجة الحرارة والكثافة العددية للألكترونات تزداد بزيادة فولتية الترسيب.


Article
Electrical glow discharges and plasma parameter of planar sputtering system for silver target
دراسة معلمات التفريغ الكهربائي لمنظومة الترذيذ المستمر لهدف مسطح من الفضة

Author: Mazin H. Hasan مازن حامد حسن
Journal: Iraqi Journal of Physics المجلة العراقية للفيزياء ISSN: 20704003 Year: 2018 Volume: 16 Issue: 37 Pages: 65-72
Publisher: Baghdad University جامعة بغداد

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Abstract

DC planar sputtering system is characterized by varying discharge potential of (250-2000 volt) and Argon gas pressures of (3.5×10-2 – 1.5) mbar. The breakdown voltage for silver electrode was studied with a uniform electric field at different discharge distances, as well as plasma parameters. The breakdown voltage is a product of the Argon gas pressure inside the chamber and gab distance between the electrodes, represent as Paschen curve. The Current-voltage characteristics curves indicate that the electrical discharge plasma is working in the abnormal glow region. Plasma parameters were found from the current-voltage characteristics of a single probe positioned at the inter-cathode space. Typical values of the electron temperature and the electron density are in the range of (2.93 –5.3) eV and (10-16 -10-17) m-3 respectively.

لقد تم في هذا البحث دراسة الخصائص الكهربائية ومعلمات البلازما لمنظومة الترذيذ المستمر مصنعة محليا, من خلال تغير فرق الجهد الكهربائي (250-2000) فولت وتغير ضغط غاز حجرة التفريغ (3.5×10-2– (1.5ملي بار. فولتية الانهيار, ضغط غاز الاركون, المسافة بين اقطاب الفضة هي المتغيرات الخارجية المستخدمة. لقد تم دراسة خصاص التفريغ الكهربائي من خلال توصيف منحني تيار التفريغ الكهربائي – الفولتية المجهزة, منحني باشنت, و منحني تيار التفريغ- ضغط الغاز السلط. كذلك تم دراسة خصائص البلازما المنتجة بأستخدام مجس لاتكميور في المنطقة الداخلية لعامود البلازما. حيث تبين ان قيم درجة حرارة الالكترونات (2.93 –5.3) الكترون فولت وكثافة الالكترونات (10-16-10-17).


Article
The Effect of Cadmium Selenide Thin Film Thickness on Carbon Monoxide Gas Sensing Properties prepared by Plasma DC-Sputtering Technique

Author: Baha'a A. M. Al-Hilli
Journal: Iraqi Journal of Science المجلة العراقية للعلوم ISSN: 00672904/23121637 Year: 2018 Volume: 59 Issue: 4C Pages: 2234-2241
Publisher: Baghdad University جامعة بغداد

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Abstract

Cadmium Selenide (CdSe) thin films have been deposited on a glass substrate utilizing the plasma DC-sputtering method at room temperature at different deposition time in order to achieve different films thickness, and studied its sensitivity to the carbon monoxide CO gas which are show high response as the film thickness increases, the DC-conductivity and photoconductivity are also studied and which are increased too as the film thickness increases, that indicates the good semiconducting behavior at room temperature and light environments.

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