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Article
Laser-Based Measurements in Non-Equilibrium Plasmas

Authors: E. bin Selima --- R. Fortier --- A. Elmahdi
Journal: Iraqi Journal of Applied Physics المجلة العراقية للفيزياء التطبيقية ISSN: 18132065 23091673 Year: 2012 Volume: 8 Issue: 1 Pages: 3-10
Publisher: iraqi society for alternative and renewable energy sources and techniques الجمعية العراقية لمصادر وتقنيات الطاقة البديلة والمستجدة

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Abstract

In this article, advanced laser diagnostics have been used in combination with modeling to study fundamental non-equilibrium low temperature Plasma Assisted Combustion kinetics. We also discuss recent advances in ultra-high frame rate imaging, which provides new capability for capturing the dynamic evolution of high speed, unsteady flow fields, and/or increasing the data collection rate in short run time “impulse” facilities.


Article
Advanced Laser Diagnostics for Non-Equilibrium Plasma Assisted Combustion Kinetics

Authors: Ali El-Mahdi --- Imad bin Selima --- Roger Fortier
Journal: Iraqi Journal of Applied Physics المجلة العراقية للفيزياء التطبيقية ISSN: 18132065 23091673 Year: 2018 Volume: 14 Issue: 2 Pages: 3-10
Publisher: iraqi society for alternative and renewable energy sources and techniques الجمعية العراقية لمصادر وتقنيات الطاقة البديلة والمستجدة

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Abstract

In this article, advanced laser diagnostics have been used in combination with modeling to study fundamental non-equilibrium low temperature Plasma Assisted Combustion kinetics. We also discuss recent advances in ultra-high frame rate imaging, which provides new capability for capturing the dynamic evolution of high speed, unsteady flow fields, and/or increasing the data collection rate in short run time “impulse” facilities.


Article
Carrier Temperature In Quantum Dot Optical Amplifiers

Authors: Kadhem A. Kadhem --- Ahmed H. Flayyih
Journal: Journal of Education for Pure Science مجلة التربية للعلوم الصرفة ISSN: 20736592 Year: 2018 Volume: 8 Issue: 3 Pages: 151-160
Publisher: Thi-Qar University جامعة ذي قار

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Abstract

AbstractThe effect of increasing of carrier temperature in wetting layer of semiconductor optical amplifier hasbeen modeling. The occupation probability, carrier heating relaxation, spontaneous emission and freecarrier absorption have been included in our formalization. The numerical calculations showed theoccupation probability directly proportion with carrier heating time as a result of reduction of carrierdensity in wetting layer. Also, the reservoir carrier temperature is directly proportional with the fullwidth at half maximum of injected pulse and carrier heating lifetime. The numerical calculations thatare showed; the carrier heating in the rate equations satisfies the thermal equilibrium between thelattice and carriers.

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