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Article
High-Quality Plasma- Induced Crystallization of Amorphous Silicon Structures

Author: A.M. Aldhafiri
Journal: Iraqi Journal of Applied Physics المجلة العراقية للفيزياء التطبيقية ISSN: 18132065 23091673 Year: 2009 Volume: 5 Issue: 1 Pages: 35-39
Publisher: iraqi society for alternative and renewable energy sources and techniques الجمعية العراقية لمصادر وتقنيات الطاقة البديلة والمستجدة

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Abstract

The investigation of polycrystalline silicon made on glass and carboncoated nickel substrates by aluminum-induced crystallization ofamorphous silicon (a-Si) is reported. Aluminum was sputtered onto a-Si films deposited in an ultra-high-vacuum plasma-enhanced chemicalvapor deposition (PECVD) system to form Al/a-Si substrate structures.These samples were then vacuum annealed for 30min. at temperaturesin the range 150-350°C. X-ray diffractometry (XRD) was utilized todetermine the crystallization temperature. Annealing at 275°C resultedin the formation of crystalline Si as observed by XRD. The presence ofthese hillocks or bumps after annealing at 275°C and above confirmsthat the a-Si has been crystallized.

Keywords

PECVD --- polycrystalline Si --- Amorphous Si --- XRD

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